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Advance Technical Information
I D (cont) =
Standard Power MOSFETs
ISOPLUS247 TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
IXTR 30N25
V DSS = 250 V
25 A
R DS(on) = 75 m ?
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
E153432
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
250
250
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
dv/dt
P D
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Note 1
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
± 20
± 30
25
120
30
30
1.0
5
150
V
V
A
A
A
mJ
J
V/ns
W
G = Gate
D = Drain
S = Source
* Patent pending
Features
Isolated backside*
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
T L
1.6 mm (0.063 in.) from case for 10 s
300
° C
l
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
V ISOL
Weight
50/60 Hz, RMS
t = 1 min
2500
5
V~
g
l
l
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
l
Rated for Unclamped Inductive Load
Switching (UIS)
Applications
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 250 μ A
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
250 V
l
l
l
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0
2.0
4.0 V
± 100 nA
l
l
DC choppers
AC motor control
l
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25 μ A
250 μ A
Advantages
Easy assembly
R DS(on)
V GS = 10 V, I D = I T
Notes 2, 3
60
75 m ?
l
l
Space savings
High power density
? 2001 IXYS All rights reserved
98873 (12/01)
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